major ratings and characteristics i t(av) sinusoidal 35 a waveform i rms 55 a v rrm / v drm 1200 v i tsm 500 a v t @ 40 a, t j = 25c 1.45 v dv/dt 1000 v/s di/dt 100 a/s t j - 40 to 125 c characteristics values units to-247ac description/ features the 40TPS12APBF safe ir series of silicon con- trolled rectifiers are specifically designed for me- dium power switching and phase control applica- tions. the glass passivation technology used has reliable operation up to 125c junction tempera- ture. low igt parts available. typical applications are in input rectification (soft start) and these products are designed to be used with international rectifier input diodes, switches and output rectifiers which are available in identical package outlines. package outline phase control scr lead-free ("pbf" suffix) 1 bulletin i2182 rev. a 05/05 safe ir series 40TPS12APBF v t < 1.45v @ 40a i tsm = 500a v rrm = 1200v www.irf.com
2 40TPS12APBF safe ir series bulletin i2182 rev. a 05/05 www.irf.com i t(av) max. average on-state current 35 a @ t c = 79 c, 180 conduction half sine wave i t(rms) max. continuous rms 55 on-state current as ac switch i tsm max. peak one cycle non-repetitive 500 a 10ms sine pulse, rated v rrm applied initial surge current 600 10ms sine pulse, no voltage reapplied t j = t j max. i 2 t max. i 2 t for fusing 1250 a 2 s 10ms sine pulse, rated v rrm applied 1760 10ms sine pulse, no voltage reapplied i 2 t max. i 2 t for fusing 12500 a 2 s t = 0.1 to 10ms, no voltage reapplied v t(to) 1 low level value of threshold 1.02 v t j = 125c voltage v t(to) 2 high level value of threshold 1.23 voltage r t1 low level value of on-state 9.74 m ? slope resistance r t2 high level value of on-state 7.50 slope resistance v tm max. peak on-state voltage 1.85 v @ 110a, t j = 25c di/dt max. rate of rise of turned-on current 100 a/s t j = 25c i h max. holding current 150 ma i l max. latching current 300 i rrm / max. reverse and direct 0.5 ma t j = 25c i drm leakage current 10 t j = 125c dv/dt max. rate of rise 1000 v/s t j = t j max., linear to 80% v drm , r g -k = open of off-state voltage voltage ratings part number v rrm / v drm , max. repetitive v rsm , maximum non repetitive i rrm / i drm peak and off-state voltage peak reverse voltage 125c vvma 40TPS12APBF 1200 1300 10 absolute maximum ratings parameters 40tps.. units conditions v r = rated v rrm / v drm
3 40TPS12APBF safe ir series bulletin i2182 rev. a 05/05 www.irf.com p gm max. peak gate power 10 w p g(av) max. average gate power 2.5 i gm max. peak gate current 2.5 a - v gm max. peak negative gate voltage 10 v v gt max. required dc gate voltage 4.0 t j = - 40c anode supply = 6v to trigger 2.5 t j = 25c resistive load 1.7 t j = 125c i gt max. required dc gate current 80 ma t j = - 40c to trigger 40 t j = 25c 20 t j = 125c v gd max. dc gate voltage not to trigger 0.25 v t j = 125c, v drm = rated value i gd max. dc gate current not to trigger 6 ma parameters 40tps.. units conditions triggering thermal-mechanical specifications t j max. junction temperature range - 40 to 125 c t stg max. storage temperature range - 40 to 125 r thjc max. thermal resistance junction 0.6 c/w dc operation to case r thja max. thermal resistance junction 40 to ambient r thcs max. thermal resistance case 0.2 mounting surface, smooth and greased to heatsink wt approximate weight 6 (0.21) g (oz.) t mounting torque min. 6 (5) kg-cm max. 12 (10) (lbf-in) case style to-247ac marking device 40tps12a parameters 40tps.. units conditions
4 40TPS12APBF safe ir series bulletin i2182 rev. a 05/05 www.irf.com fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current 70 80 90 100 110 120 130 0 102030405060 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period 40tps.. series r (dc) = 0.6 c/ w thjc 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 rm s li m i t conduction angle maximum avera g e on-state power loss (w) average on-state current (a) 180 120 90 60 30 4 0 tps. . se r i e s t = 1 25 c j 0 10 20 30 40 50 60 70 80 0 102030405060 dc 180 120 90 60 30 rm s li m i t conduction period maximum average on-state power loss (w) average on-state current (a) 40tps.. s eries t = 125c j 250 300 350 400 450 500 550 1 10 100 number of equal amplitude half cycle current pulses (n) peak half s ine wave on-state current (a) init ia l t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j 4 0 tps. . se r i e s at any rated load condition and with rated v applied following surge. rrm 250 300 350 400 450 500 550 600 0.01 0.1 1 peak half sine wave on-state current (a) pulse train duration (s) maximum non repetitive surge current versus pulse t rain duration. control of conduction may not be maintained. 40tps.. series initial t = 125c no voltage reapplied rated v reapplied j rrm 70 80 90 100 110 120 130 010203040 30 60 90 120 180 maximum allowable case temperature (c) conduction angle average on-state current (a) 40tps.. series r (dc) = 0.6 c/ w thjc
5 40TPS12APBF safe ir series bulletin i2182 rev. a 05/05 www.irf.com fig. 7 - on-state voltage drop characteristics fig. 8 - gatecharacteristics fig. 9 - thermal impedance z thjc characteristics 1 10 100 0.5 1 1.5 2 t = 2 5 c instantaneous on-state current (a) instantaneous on-state voltage (v) t = 125c j 40tps.. se ries j 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 square wave pulse duration (s) steady state value (dc operation) sing le pulse d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 4 0 tp s. . se r i e s thjc transient thermal impedance z (c/w) instantaneous gate current (a) instantaneous gate voltage (v) 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 (b) (a) (4) (3) (2) (1) tj = 25 ? c tj = 125 ? c frequency limited by pg(av) igd vgd tr = 1 s, tp >= 6 s <= 30% rated di/dt: 10 v, 65 ohms b)recommended load line for a)recommended load line for rectangular gate pulse (1) pgm = 100 w, tp = 500s (2) pgm = 50 w, tp = 1 ms (3) pgm = 20 w, tp = 25 ms (4) pgm = 10 w, tp = 5 ms 40tps..a series rated di/dt: 20 v, 30 ohms tr = 0.5 s, tp >= 6 s tj = -40 ? c
6 40TPS12APBF safe ir series bulletin i2182 rev. a 05/05 www.irf.com outline table dimensions in millimeters and inches 15.90 (0.626) 15.30 (0.602) 14 .20 (0 .559 ) 14.80 ( 0.583) 3. 70 (0.14 5) 4. 30 (0.17 0) 5.30 ( 0.208) 5. 70 (0 .225) 5.50 (0.217) 4. 50 (0 .177) (2 plcs.) 3.55 (0.139) 3. 65 (0.14 4) 2. 20 (0 .087) max. 1. 00 (0.039) 1. 40 (0.056) 0.40 (0.213) 0.80 ( 0.032) 4.70 ( 0.185) 5. 30 (0.20 9) 1.5 (0.059) 2.5 ( 0.098) 2.40 (0.095) max. 10 .86 (0.427) 10.94 ( 0.430) 20 .30 (0 .800 ) 19 .70 (0 .775 ) dia. 12 3 marking information rectifier international assembly lot code example: in assembly line "h" assembled on ww 35, 2000 with assembly lot code 5657 logo p = lead-free year 0 = 2000 part number line h week 35 p035h 56 57 date code this is a 40tps12a 40tps12a (g) 3 2 (a) 1 (k)
7 40TPS12APBF safe ir series bulletin i2182 rev. a 05/05 www.irf.com ordering information table 40 t p s 12 a pbf device code 1 5 24 3 1 - current rating (40 = 40a) 2 - circuit configuration: t = thyristor 3 - package: t = to-247 4 - type of silicon: s = standard recovery rectifier 5 - voltage rating (12 = 1200v) 6 - a = low igt selection 40ma max. 7 - y none = standard production y pbf = lead-free 6 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7309 visit us at www.irf.com for sales contact information. 05/05 data and specifications subject to change without notice. this product has been designed and qualified for industrial level and lead-free. qualification standards can be found on ir's web site. 7
|
